Strained 1.3 [micro sign]m MQW AlGaInAs lasers grown by digital alloy MBE
- 1 January 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (12), 1031-1032
- https://doi.org/10.1049/el:20000789
Abstract
AlGaInAs strained MQW lasers, emitting at 1.3 µm, have been prepared for the first time using a digital alloy approach. 2 µm stripe geometry lasers have characteristics comparable to those of lasers prepared using bulk alloy layers. Infinite length threshold current densities are as low as 140 kA/cm2/quantum well, and T0 values (20–40°C) range from 75–90 K for chip lengths of 375–2375 µm.Keywords
This publication has 4 references indexed in Scilit:
- AlGaInAs/InP strained-layer quantum well lasers at 1.3 µm grown by solid source molecular beam epitaxyJournal of Electronic Materials, 1999
- High-performance uncooled 1.3-μm Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applicationsIEEE Journal of Quantum Electronics, 1994
- Low-threshold 1.5 mu m compressive-strained multiple- and single-quantum-well lasersIEEE Journal of Quantum Electronics, 1991
- Very low threshold current density SCH-MQW laser diodes emitting at 1.55[micro sign]mElectronics Letters, 1989