Radiation resistance of GaAs structures based on pi - nu junctions
- 14 March 1995
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 28 (3), 559-564
- https://doi.org/10.1088/0022-3727/28/3/017
Abstract
The results of studying GaAs samples with built-in pi - nu junctions as the base for the construction of radiation-resistant coordinate-sensitive detectors are presented. The GaAs samples have been exposed to the beam of the linear proton accelerator, using an Al target for neutron production. The I-V characteristics of GaAs samples have been analysed to investigate the change in their properties. The study of the radiation resistance of the GaAs samples has shown that their main characteristics (charge collection efficiency, signal-to-noise ratio) are degraded by less than 20% at the integral neutron fluence of 1.2*1015 cm-2.Keywords
This publication has 4 references indexed in Scilit:
- Exploration of GaAs structures with π-ν junction for coordinate sensitive detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1994
- An exploration of GaAs structures for solid-state detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1993
- Electrical transport in H+-irradiated gallium arsenideSolid State Communications, 1980
- The optical and electrical effects of high concentrations of defects in irradiated crystalline gallium arsenideAdvances in Physics, 1975