ION-BOMBARDMENT-ENHANCED ETCHING OF SILICON
- 15 August 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 15 (4), 117-119
- https://doi.org/10.1063/1.1652928
Abstract
A method is described which permits rapid and precise selective etching of silicon crystal surfaces without protecting any part of the surface during the etch procedure. Prior to the etching process the areas to be etched are subjected to an ion‐bombardment treatment, which increases the etch rate in the bombarded surface layer compared to the etch rate of untreated silicon. Etching characteristics for silicon crystals bombarded with neon and argon are presented and shown to agree with theoretical predictions based on a simple model in which the etching characteristics are related to implantation‐produced cluster damage.Keywords
This publication has 4 references indexed in Scilit:
- Improved profiles of electrical activity in boron implanted siliconPhysics Letters A, 1968
- Observation of ion bombardment damage in siliconPhilosophical Magazine, 1968
- Ion implantation in semiconductors—Part I: Range distribution theory and experimentsProceedings of the IEEE, 1968
- Damage to Silicon Produced by Bombardment with Helium IonsJournal of Applied Physics, 1957