Ohmic contacts produced by laser-annealing Te-implanted GaAs
- 1 December 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (11), 965-967
- https://doi.org/10.1063/1.90237
Abstract
We report the formation of Ohmic contacts to high‐dose (∼1016 cm−2) Te‐implanted n‐type GaAs annealed with a Q‐switched Nd : YAG laser. The annealing results in a Te concentration greater than 10 times the equilibrium solubility and the formation of free Ga at the surface. Ohmic contacts of specific contact resistance rc≃2×10−5 Ω cm2 were obtained by first removing the surface Ga by an HCl etch and then backsputtering to remove 50 Å of GaAs, thereby exposing a surface of high Te concentration.This publication has 8 references indexed in Scilit:
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