A novel high-voltage high-speed MESFET using a standard GaAs digital IC process
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (2), 246-250
- https://doi.org/10.1109/16.277371
Abstract
A novel gallium arsenide high-voltage MESFET structure (HVFET) suitable for high-voltage, high-speed output drivers is described. The device uses an extended drain region and a two-step gate field plate structure to achieve high breakdown voltage of 130 V. The device is implemented using a standard GaAs enhancement/depletion MESFET digital IC process without any additional processing steps and exhibits turn-on and turn-off times under 200 psKeywords
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