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Phase-locked (GaAl)As laser diode emitting 2.6 W CW from a single mirror
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Phase-locked (GaAl)As laser diode emitting 2.6 W CW from a single mirror
Phase-locked (GaAl)As laser diode emitting 2.6 W CW from a single mirror
DS
D.R. Scifres
D.R. Scifres
CL
C. Lindström
C. Lindström
RB
R.D. Burnham
R.D. Burnham
WS
W. Streifer
W. Streifer
TP
T.L. Paoli
T.L. Paoli
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1 January 1983
journal article
Published by
Institution of Engineering and Technology (IET)
in
Electronics Letters
Vol. 19
(5)
,
169-171
https://doi.org/10.1049/el:19830118
Abstract
A phase-locked multiple-quantum-well (GaAl)As injection laser with a highly reflective rear facet coating and a low reflective front facet coating is reported to emit 2.6 W CW at room temperature from the front facet.
Keywords
LASER DIODE
PHASE LOCKED LASER
LOW REFLECTIVE FRONT FACET COATING
ROOM TEMPERATURE OPERATION
SINGLE MIRROR
GAALAS
III-V SEMICONDUCTOR
MULTIPLE QUANTUM WELL LASER
POWER OUTPUT 2.6 W CW
HIGHLY REFLECTIVE REAR FACET COATING
WAVELENGTH 836.5 NM
SEMICONDUCTOR LASER ARRAYS
MQW LASER
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Cited by 176 articles