Electroluminescence in amorphous silicon
- 1 November 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (9), 620-622
- https://doi.org/10.1063/1.89165
Abstract
Electroluminescence has been obtained in forward‐biased p‐i‐n diodes, and also in Schottky barrier diodes fabricated from discharge‐produced amorphous Si. The emission at 78 °K in both electroluminescence and photoluminescence peaks at 1.28±0.08 eV in a 0.2‐eV broad band with an external quantum efficiency of ∼10−3.Keywords
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