Electroless Copper Deposition for Ultralarge-Scale Integration
- 1 January 2001
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 148 (1), C47-C53
- https://doi.org/10.1149/1.1344538
Abstract
The characteristics of electroless copper plating on different substrates of TiN/SiO2/Si,TiN/SiO2/Si, Cuseed/Ta/SiO2/Si,Cuseed/Ta/SiO2/Si, and Cuseed/TaN/SiO2/SiCuseed/TaN/SiO2/Si have been investigated. Continuous copper films with good surface morphology are obtained, and hydrogen-induced blister formation is inhibited by optimizing plating solution and conditions. Surface roughness of the electrolessly plated copper films increases with increasing film thickness, and the average roughness is 11 nm at a film thickness of 1 μm on Cuseed/TaN/SiO2/SiCuseed/TaN/SiO2/Si substrate. Conformal copper deposition with excellent step coverage completely fills deep subquarter-micrometer features of high aspect ratios up to five. Copper growth orientation depends on the underlayer structure. A copper film with strong (111) texture is plated on the (111) textured copper seed layer of Cuseed/TaN/SiO2/SiCuseed/TaN/SiO2/Si substrate, while no preferred orientation is found on the other substrates. After thermal annealing at 400°C in N2/H2N2/H2 for 1 h, Cu(111) texture is enhanced in all systems. By thermal annealing, defects in the plated copper are reduced, and the electrical resistivity of the plated copper is lowered to 1.75 μΩ cm at room temperature. © 2000 The Electrochemical Society. All rights reserved.Keywords
This publication has 30 references indexed in Scilit:
- Grain nucleation and texture analysis of electroless copper deposition on a palladium seed layerJournal of Electronic Materials, 1998
- A simulation study of long throw sputtering for diffusion barrier deposition into high aspect vias and contactsIEEE Transactions on Electron Devices, 1998
- Effect of Thin-Film Texture and Zirconium Diffusion on Reliability against Electromigration in Chemical-Vapor-Deposited Copper InterconnectsJapanese Journal of Applied Physics, 1998
- Temperature Dependence of the Morphology of Copper Sputter Deposited on TiN Coated SubstratesJournal of the Electrochemical Society, 1997
- Formation of copper interconnects by the reflow of sputtered copper filmsElectronics and Communications in Japan (Part II: Electronics), 1996
- Selective chemical vapor deposition of copper using (hfac) copper(I) vinyltrimethylsilane in the absence and presence of waterThin Solid Films, 1995
- Evaluation of copper Chemical-Vapor-Deposition films on glass and Si(100) substratesApplied Physics A, 1994
- Selective and blanket copper chemical vapor deposition for ultra-large-scale integrationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Selective electroless copper for VLSI interconnectionIEEE Electron Device Letters, 1989
- Metallization for very-large-scale integrated circuitsThin Solid Films, 1982