Photovoltaic effect in MIS diodes or Schottky diodes with an interfacial layer
- 1 May 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (9), 512-514
- https://doi.org/10.1063/1.88837
Abstract
Recent reports in the literature indicate that the introduction of an interfacial oxide layer in a Schottky barrier can increase greatly the photovolatic conversion efficiency of such devices. We propose an explanation for the operation of such solar cells based on the concept that they are minority‐carrier nonequilibrium MIS tunnel diodes.Keywords
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