Direct writing of electronic devices on graphene oxide by catalytic scanning probe lithography
Open Access
- 1 January 2012
- journal article
- research article
- Published by Springer Science and Business Media LLC in Nature Communications
- Vol. 3 (1), 1194
- https://doi.org/10.1038/ncomms2200
Abstract
Reduction of graphene oxide at the nanoscale is an attractive approach to graphene-based electronics. Here we use a platinum-coated atomic force microscope tip to locally catalyse the reduction of insulating graphene oxide in the presence of hydrogen. Nanoribbons with widths ranging from 20 to 80 nm and conductivities of >104 S m−1 are successfully generated, and a field effect transistor is produced. The method involves mild operating conditions, and uses arbitrary substrates, atmospheric pressure and low temperatures (≤115 °C).Keywords
This publication has 31 references indexed in Scilit:
- High-frequency, scaled graphene transistors on diamond-like carbonNature, 2011
- 100-GHz Transistors from Wafer-Scale Epitaxial GrapheneScience, 2010
- Direct observation of a widely tunable bandgap in bilayer grapheneNature, 2009
- Longitudinal unzipping of carbon nanotubes to form graphene nanoribbonsNature, 2009
- Fabrication of graphene nanoribbon by local anodic oxidation lithography using atomic force microscopeApplied Physics Letters, 2009
- Atomic force microscope local oxidation nanolithography of grapheneApplied Physics Letters, 2008
- Nanolithography and manipulation of graphene using an atomic force microscopeSolid State Communications, 2008
- Chemically Derived, Ultrasmooth Graphene Nanoribbon SemiconductorsScience, 2008
- The rise of grapheneNature Materials, 2007
- Electronic Confinement and Coherence in Patterned Epitaxial GrapheneScience, 2006