Effect of microstructural change on magnetic property of Mn-implanted p-type GaN
- 27 January 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (4), 583-585
- https://doi.org/10.1063/1.1541111
Abstract
A dilute magnetic semiconductor was achieved by implanting Mn ions into p -type GaN and subsequent annealing. The ferromagneticproperty was obtained after annealing at 800 ° C . This was attributed to the formation of Ga–Mn magnetic phases. Higher temperature annealing at 900 ° C reduced the ferromagnetic signal and produced antiferromagnetic Mn–N compounds such as Mn 6 N 2.58 and Mn 3 N 2 , leaving N vacancies. This provides evidence that N vacancies play a critical role in weakening the ferromagneticproperty in the Mn-implanted GaN.Keywords
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