Electrical resistance measurements at high pressure and low temperature using a diamond-anvil cell
- 1 April 1982
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 53 (4), 499-502
- https://doi.org/10.1063/1.1136997
Abstract
A new method of measuring electrical resistance in a diamond‐anvil cell has been developed. The sample assembly consisting of copper‐plate electrodes and polymer film has been used for a modified two‐probe method. The resistance measurements have been carried out at pressures up to 250 kbar and temperatures down to 1.7 K using a diamond‐anvil cell driven by helium gas. This method has been applied to investigate the pressure‐induced phase transition in iodine and superconducting transition in hydrogenated amorphous silicon films.Keywords
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