Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal–oxide semiconductor field effect transistor (MOSFET)
- 30 April 2010
- journal article
- research article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 54 (4), 362-367
- https://doi.org/10.1016/j.sse.2009.12.033
Abstract
No abstract availableKeywords
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