Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures
- 13 January 2014
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 104 (2), 021105
- https://doi.org/10.1063/1.4862064
Abstract
Efficient semiconductor optical emitters in the deep-ultraviolet spectral window are encountering some of the most deep rooted problems of semiconductor physics. In III-Nitride heterostructures, obtaining short-wavelength photon emission requires the use of wide bandgap high Al composition AlGaN active regions. High conductivity electron (n-) and hole (p-) injection layers of even higher bandgaps are necessary for electrical carrier injection. This approach requires the activation of very deep dopants in very wide bandgap semiconductors, which is a difficult task. In this work, an approach is proposed and experimentally demonstrated to counter the challenges. The active region of the heterostructure light emitting diode uses ultrasmall epitaxially grown GaN quantum dots. Remarkably, the optical emission energy from GaN is pushed from 365 nm (3.4 eV, the bulk bandgap) to below 240 nm (>5.2 eV) because of extreme quantum confinement in the dots. This is possible because of the peculiar bandstructure and band alignments in the GaN/AlN system. This active region design crucially enables two further innovations for efficient carrier injection: Tunnel injection of carriers and polarization-induced p-type doping. The combination of these three advances results in major boosts in electroluminescence in deep-ultraviolet light emitting diodes and lays the groundwork for electrically pumped short-wavelength lasers.Keywords
This publication has 23 references indexed in Scilit:
- Advances in group III-nitride-based deep UV light-emitting diode technologySemiconductor Science and Technology, 2010
- 100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beamNature Photonics, 2010
- Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiencyApplied Physics Letters, 2009
- Ultraviolet light-emitting diodes based on group three nitridesNature Photonics, 2008
- An aluminium nitride light-emitting diode with a wavelength of 210 nanometresNature, 2006
- Nonlinear Behavior of Spontaneous and Piezoelectric Polarization in III-V Nitride Alloysphysica status solidi (a), 2002
- Heavy doping effects in Mg-doped GaNJournal of Applied Physics, 2000
- Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaNPhysical Review B, 1997
- Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum WellsJapanese Journal of Applied Physics, 1997
- Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark EffectPhysical Review Letters, 1984