EPR study ofandin InP
- 1 August 1977
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 16 (3), 974-977
- https://doi.org/10.1103/physrevb.16.974
Abstract
At 4.5 K, () displays a cubic-symmetry EPR spectrum in InP similar to that in related III-V semiconductors, with parameters and . Optical transitions near 0.75 and 1.13 eV produce transient decreases in the signal. The () site symmetry in InP is reduced to tetragonal () by a Jahn-Teller distortion as in GaAs. The EPR parameters found are , , , .
Keywords
This publication has 10 references indexed in Scilit:
- EPR of() in gallium arsenide: Jahn-Teller distortion and photoinduced charge conversionPhysical Review B, 1977
- ESR identification of the iron double electron trap state in GaPSolid State Communications, 1977
- EPR ofin GaAs—evidence for strong Jahn-Teller effectsPhysical Review B, 1977
- ENDOR-investigations of iron doped GaAs and GaPZeitschrift für Physik B Condensed Matter, 1976
- Semi-insulating properties of Fe-doped InPElectronics Letters, 1975
- ENDOR-Untersuchungen an GaP: Fe3+The European Physical Journal A, 1974
- EPR ofin II-VI latticesPhysical Review B, 1974
- Electron Paramagnetic Resonance of Iron in Indium ArsenidePhysical Review B, 1964
- g- value of Fe3+ in II–VI cubic crystalsJournal of Physics and Chemistry of Solids, 1964
- Electron Paramagnetic Resonance of Iron in Gallium ArsenidePhysical Review B, 1963