Air as an adjustable insulator for C-V and G-V analysis of semiconductor surfaces
- 1 July 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (1), 104-106
- https://doi.org/10.1063/1.95003
Abstract
An adjustable metal‐air‐semiconductor capacitor was fabricated using a Pb disk suspended 1700–3600 Å above an n‐type Si 〈111〉 surface. Experimental differential capacitance versus voltage and differential conductance versus voltage curves are similar to those previously obtained for metal‐oxide‐semiconductor capacitors.Keywords
This publication has 6 references indexed in Scilit:
- Electromagnetic squeezer for compressing squeezable electron tunneling junctionsReview of Scientific Instruments, 1984
- Squeezable electron tunneling junctionsApplied Physics Letters, 1983
- Perspectives on III–V compound MIS structuresJournal of Vacuum Science and Technology, 1978
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Field Effect‐Capacitance Analysis of Surface States on SiliconPhysica Status Solidi (b), 1963
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962