Electron trapping by radiation-induced charge in MOS devices

Abstract

Electron trapping by positive charge centers induced in MOS structures by exposure to x rays has been studied by the avalanche injection technique. Five electron traps with cross sections ranging from 10⁻¹³ to 10⁻¹⁹ cm² have been measured. Two of these account for the majority of positive charge in the SiO₂ and the remaining three are associated with positive or neutral centers in the oxide.