POCKELS READOUT OPTICAL MEMORY USING Bi12SiO20
- 15 April 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 18 (8), 325-328
- https://doi.org/10.1063/1.1653681
Abstract
The Pockels Readout Optical Memory using Bi12SiO20 single crystals is described. Devices have a built‐in capability to optically read out a positive or a negative image from a single stored image. The stored information also can be selectively erased. Application of 650 V across the crystal wafer introduces a retardation of 30°. The read‐in and dark decay mechanisms, which include sensitivity, resolution, and response time, are discussed. The sensitivity is better than most of the previously reported reusable optical memories. The resolution is 10 μm. The read‐in response time is 5×10−6 sec. The storage time is 50 min under a constant illumination of 0.4 μW/cm2 at 633 nm and is 2 h in the dark. The dark resistivity of Bi12SiO20 after complete dark adaptation is likely to be ∼1015 Ω cm.Keywords
This publication has 7 references indexed in Scilit:
- Electrical and Optical Properties of Bi12SiO20Journal of Applied Physics, 1971
- IMAGE STORAGE AND OPTICAL READOUT IN A ZnS DEVICEApplied Physics Letters, 1970
- OPTICAL ACTIVITY AND FARADAY ROTATION IN BISMUTH OXIDE COMPOUNDSApplied Physics Letters, 1970
- Optical Activity and Electrooptic Effect in Bismuth Germanium Oxide (Bi_12GeO_20)Applied Optics, 1966
- Electrooptic light modulatorsProceedings of the IEEE, 1966
- Electro-Optic Light Modulation with Cubic CrystalsApplied Optics, 1963
- Drift Mobilities of Electrons and Holes and Space-Charge-Limited Currents in Amorphous Selenium FilmsPhysical Review B, 1962