Mechanism of carbon incorporation in MOCVD GaAs
- 1 September 1984
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 68 (1), 148-156
- https://doi.org/10.1016/0022-0248(84)90410-x
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Morphology of organometallic CVD grown GaAs epitaxial layersJournal of Crystal Growth, 1983
- Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation DependenceJournal of the Electrochemical Society, 1983
- On the Reaction Mechanism of GaAs MOCVDJournal of the Electrochemical Society, 1983
- Emergence of a periodic mode in the so-called turbulent region in a circular Couette flowJournal de Physique Lettres, 1982
- High purity GaAs prepared from trimethylgallium and arsineJournal of Crystal Growth, 1981
- A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxyJournal of Crystal Growth, 1981
- An Examination of the Product Catalyzed Reaction of Trimethylgallium with Phosphine and the Mechanism of the Chemical Vapor Deposition of Gallium Phosphide and Gallium ArsenideJournal of the Electrochemical Society, 1977
- Properties of Epitaxial GaAs Layers from a Triethyl Gallium and Arsine SystemJournal of the Electrochemical Society, 1975
- Epitaxial Deposition of GaAs in the Ga (CH3)3-AsH3-H2‐System (IV) Thermodynamic and Kinetic ConsiderationsCrystal Research and Technology, 1974
- Properties of Epitaxial Gallium Arsenide from Trimethylgallium and ArsineJournal of the Electrochemical Society, 1973