Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off
- 6 September 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (10), 1360-1362
- https://doi.org/10.1063/1.124693
Abstract
Indium–gallium nitride (InGaN)multiple-quantum-well(MQW)light-emitting diode(LED) membranes, prefabricated on sapphire growth substrates, were created using pulsed-excimer laser processing. The thin-filmInGaNMQWLED structures, grown on sapphire substrates, were first bonded onto a Si support substrate with an ethyl cyanoacrylate-based adhesive. A single 600 mJ/cm2, 38 ns KrF (248 nm) excimer laser pulse was directed through the transparent sapphire, followed by a low-temperature heat treatment to remove the substrate. Free-standing InGaNLED membranes were then fabricated by immersing the InGaN LED/adhesive/Si structure in acetone to release the device from the supporting Si substrate. The current–voltage characteristics and room-temperature emission spectrum of the LEDs before and after laser lift-off were unchanged.Keywords
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