Study of persistent photoconductivity effect in n-type selectively doped AlGaAs/GaAs heterojunction
- 1 August 1984
- journal article
- Published by Elsevier BV in Solid State Communications
- Vol. 51 (5), 317-322
- https://doi.org/10.1016/0038-1098(84)90696-3
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Persistent photo-conductance and photoquenching of selectively doped Al0.3Ga0.7As GaAs/heterojunctionsJournal of Electronic Materials, 1983
- Photoconductivity effects in extremely high mobility modulation-doped (Al,Ga)As/GaAs heterostructuresJournal of Applied Physics, 1982
- Dependence of electron mobility in modulation-doped GaAs-(AlGa)As heterojunction interfaces on electron density and Al concentrationApplied Physics Letters, 1981
- Electronic Properties of a Semiconductor Superlattice II. Low Temperature Mobility Perpendicular to the SuperlatticeJournal of the Physics Society Japan, 1980
- Two-dimensional electron gas at a semiconductor-semiconductor interfaceSolid State Communications, 1979
- Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor SurfacePhysical Review B, 1958