Effect of dislocations on electrical and optical properties of n-type Al0.34Ga0.66N

Abstract

The effect of edge and screw dislocations on the electrical and optical properties of $n$ -type ${\text{Al}}_{0.34}{\text{Ga}}_{0.66}\text{N}$ is investigated. It is found that edge dislocations strongly affect the electrical properties of $n$ -type ${\text{Al}}_{0.34}{\text{Ga}}_{0.66}\text{N}$ . Both free carrier concentration and mobility decrease with increasing edge dislocation density. Edge dislocations also enhance nonradiative recombination, which is indicated by decreasing near-band-edge UV as well as parasitic blue photoluminescence. The UV/blue ratio is found to be independent of the edge dislocation density but strongly depends on the Si doping concentration.