Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns
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- 10 November 2005
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (20), 203508
- https://doi.org/10.1063/1.2132073
Abstract
We observed a significant enhancement in light output from GaN-based light-emitting diodes (LEDs) in which two-dimensional photonic crystal (PC) patterns were integrated. Two-dimensional square-lattice air-hole array patterns with a period that varied from 300 to 700 nm were generated by laser holography. Unlike the commonly utilized electron-beam lithographic technique, the holographic method can make patterns over a large area with high throughput. The resultant PC-LED devices with a pattern period of had more than double the output power, as measured from the top of the device. The experimental observations are qualitatively consistent with the results of three-dimensional finite-difference-time-domain simulation.
Keywords
This publication has 12 references indexed in Scilit:
- Simulation and fabrication of highly efficient InGaN‐based LEDs with corrugated interface substratephysica status solidi (c), 2005
- Highly efficient vertical laser-liftoff GaN-based light-emitting diodes formed by optimization of the cathode structureApplied Physics Letters, 2005
- Fabrication and performance of efficient blue light emitting III-nitride photonic crystalsApplied Physics Letters, 2004
- Surface-plasmon-enhanced light emitters based on InGaN quantum wellsNature Materials, 2004
- InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structuresApplied Physics Letters, 2004
- Photonic Crystal Slab Waveguides Fabricated by the Combination of Holography and PhotolithographyJapanese Journal of Applied Physics, 2004
- Increase in the extraction efficiency of GaN-based light-emitting diodes via surface rougheningApplied Physics Letters, 2004
- III-nitride blue and ultraviolet photonic crystal light emitting diodesApplied Physics Letters, 2004
- InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh ElectrodeJapanese Journal of Applied Physics, 2002
- High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 2001