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Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy
Home
Publications
Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy
Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy
TC
T. S. Cheng
T. S. Cheng
LJ
L. C. Jenkins
L. C. Jenkins
SH
S. E. Hooper
S. E. Hooper
C. T. Foxon
C. T. Foxon
J. W. Orton
J. W. Orton
DL
D. E. Lacklison
D. E. Lacklison
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20 March 1995
journal article
Published by
AIP Publishing
in
Applied Physics Letters
Vol. 66
(12)
,
1509-1511
https://doi.org/10.1063/1.113671
Abstract
No abstract available
Keywords
MOLECULAR BEAM EPITAXY
CRYSTAL STRUCTURE
ARSENIC
X RAY DIFFRACTION
ZINC
FULL WIDTH AT HALF MAXIMUM
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