Short-channel Al0.5Ga0.5N/GaN MODFETs with power density > 3 W/mm at 18 GHz

Abstract

The authors have demonstrated 0.25 µm gate-length Al_0.5Ga_0.5N/GaN MODFETs on sapphire substrates which exhibit CW output power densities > 3 W/mm at 18 GHz, the highest reported to date for microwave FETs in the K band. This confirms the promise of the high Al-content AlGaN/GaN MODFET structure.