Adsorption of atomic hydrogen on Si(100) surface

Abstract

The interaction of atomic hydrogen (deuterium) was studied by nuclear reaction analysis and Rutherford backscattering-channeling analysis. The hydrogen coverage as a function of exposure is found to exhibit a plateau at about 2.0 monolayers. The coverage continues to increase with further exposures of atomic hydrogen (deuterium), a consequence of localized etching of the silicon surface. The channeling data show that the Si(100)-2×1 surface is highly strained. The strains parallel to the (100) surface are mostly removed on the ‘‘saturated’’ bulklike Si(100)-1×1-H surface.