High-speed low-power DCFL using planar two-dimensional electron gas FET technology
- 1 January 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (12), 517-519
- https://doi.org/10.1049/el:19820351
Abstract
Planar two-dimensional electron gas FETs (TEGFETs) have been shown to have ultra-high speed and low power in DCFL circuits operating at room temperature: 18.4 ps at 900 μW and 32.5 ps at 62 μW. The latter result and the simplicity of the process involved are compatible with VLSI requirements.Keywords
This publication has 1 reference indexed in Scilit:
- Speed power in planar two-dimensional electron gas FET DCFL circuit: a theoretical approachElectronics Letters, 1982