GaAs1−xPx DIODE PUMPED YAG: Nd LASERS
- 1 February 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 18 (3), 93-96
- https://doi.org/10.1063/1.1653578
Abstract
Experiments using GaAs1−xPx diodes emitting at 8100 Å to cw pump YAG: Nd laser rods are described. At an electrical input power of 7.6 W to an array of 4% efficient diodes operating at room‐temperature threshold was attained for a laser rod, with high‐reflectivity mirrors, cooled to 3.5°C. For a laser rod with a 0.4% transmission output mirror threshold was reached at −2.5°C. From threshold‐temperature‐dependence data for the latter rod, an extrapolation has been made showing that a straightforward increase in the number of diodes by a factor of 3 to 4 will result in threshold being exceeded by 2 to 3 times at a rod temperature of 20°C.Keywords
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