Deposition of carbon-containing hole injection layers on p-type Al0.8Ga0.2N grown by metalorganic vapor phase epitaxy
- 10 August 2020
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 117 (6), 062101
- https://doi.org/10.1063/5.0017703
Abstract
A carbon-containing amorphous film is deposited on metalorganic-vapor-phase-epitaxy-grown AlN or AlGaN templates by flowing propane, aluminum, and nitrogen gases at 1010 degrees C. The deposited similar to 1-nm-thick layers show p-type conductivity with a sheet carrier density of similar to 1x10(13)cm(-2). When the film is deposited on Mg-doped Al0.8Ga0.2N prior to metallization, it acts as a hole injection layer into p-type AlGaN and shows nearly a double increase in hole current. The transmittance of the deposited layer is similar to 90% in the 200-400-nm wavelength range. Hence, the deposited layer is a promising hole injection layer into high-Al-content p-type AlGaN.Funding Information
- Japan Society for the Promotion of Science (JP16H02332)
- Japan Society for the Promotion of Science (JP15H05732)
- Japan Society for the Promotion of Science (JP16H06426)
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