A 271.8 nm deep-ultraviolet laser diode for room temperature operation
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- 8 November 2019
- journal article
- research article
- Published by IOP Publishing in Applied Physics Express
- Vol. 12 (12), 124003
- https://doi.org/10.7567/1882-0786/ab50e0
Abstract
We present a deep-ultraviolet semiconductor laser diode that operates under current injection at room temperature and at a very short wavelength. The laser structure was grown on the (0001) face of a single-crystal aluminum nitride substrate. The measured lasing wavelength was 271.8 nm with a pulsed duration of 50 ns and a repetition frequency of 2 kHz. A polarization-induced doping cladding layer was employed to achieve hole conductivity and injection without intentional impurity doping. Even with this undoped layer, we were still able to achieve a low operation voltage of 13.8 V at a lasing threshold current of 0.4 A.Keywords
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