Ultrasmall, Ultracompact and Ultrahigh Efficient InGaN Micro Light Emitting Diodes (μLEDs) with Narrow Spectral Line Width

Abstract

Augmented reality and visual reality (AR and microdisplays require micro light emitting diodes (mu LEDs) with an ultrasmall dimension (<= 5 mu m), high external quantum efficiency (EQE), and narrow spectral line width. Unfortunately, dry etching which is the most crucial step for the fabrication of mu LEDs in current approaches introduces severe damages, which seem to become an insurmountable challenge for achieving ultrasmall mu LEDs with high EQE. Furthermore, it is well-known that mu LEDs which require InGaN layers as an emitting region naturally exhibit significantly broad spectral line width, which becomes increasingly severe toward long wavelengths such as green. In this paper, we have reported a combination of our selective overgrowth approach developed very recently and epitaxial lattice-matched distributed Bragg reflectors (DBRs) embedded in order to address all these fundamental issues. As a result, our mu LEDs with a diameter of 3.6 pm and an interpitch of 2 mu m exhibit an ultrahigh EQE of 9% at similar to 500 nm. More importantly, the spectral line width of our mu LEDs has been significantly reduced down to 25 nm, the narrowest value reported so far for III-nitride green mu LEDs.