GaN‐based emissive microdisplays: A very promising technology for compact, ultra‐high brightness display systems
- 1 November 2016
- journal article
- research article
- Published by Wiley in Journal of the Society for Information Display
- Vol. 24 (11), 669-675
- https://doi.org/10.1002/jsid.516
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO2/GaN-LED waferApplied Physics Express, 2016
- 75-1:Invited Paper: GaN-based Emissive Microdisplays: A Very Promising Technology for Compact, Ultra-high Brightness Display SystemsSID Symposium Digest of Technical Papers, 2016
- A Room Temperature Flip-Chip Technology for High Pixel Count Micro-Displays and Imaging ArraysPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2016
- 26.1: Invited Paper: Quantum Photonic Imager (QPI): A Novel Display Technology that Enables more than 3D ApplicationsSID Symposium Digest of Technical Papers, 2015
- 26.2: Invited Paper: High Brightness, Emissive Microdisplay by Integration of III‐V LEDs with Thin Film Silicon TransistorsSID Symposium Digest of Technical Papers, 2015
- Aluminum to Aluminum bonding at room temperaturePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2013
- III-Nitride full-scale high-resolution microdisplaysApplied Physics Letters, 2011
- The early history of the high electron mobility transistor (HEMT)IEEE Transactions on Microwave Theory and Techniques, 2002
- III-nitride blue microdisplaysApplied Physics Letters, 2001
- GaN microdisk light emitting diodesApplied Physics Letters, 2000