Hydrogenation-produced In2O3/InN core-shell nanorod and its effect on NO2 gas sensing behavior
- 14 August 2020
- journal article
- research article
- Published by IOP Publishing in Nanotechnology
- Vol. 31 (33), 335503
- https://doi.org/10.1088/1361-6528/ab8df0
Abstract
In this work, for the first time, we have made InN/In2O3 core-shell heterostructure by hydrogen plasma treatment. InN nanorods (NRs) were grown by using plasma-assisted molecular beam epitaxy, and hydrogen plasma treatment was performed by using reactive ion etching at room temperature. From x-ray photoemission spectroscopy studies, it was observed that the bonding partner of In changes from N to O and N 1s completely disappeared in the hydrogenated InN NRs. Furthermore, high-resolution transmission electron microscopy revealed the formation of InN/In2O3 core-shell NRs by hydrogenation plasma treatment. The resistance of pristine InN NRs was decreased in NO2 ambient. Interestingly, the resistance of the InN/In2O3 core-shell was increased while introducing NO2 gas. InN NR surface exhibits downward band bending due to the electron accumulation, in NO2 ambient, and the surface band bending was decreased due to the increase in the bulk conduction channel. This reversed gas sensing behavior in InN/In2O3 core-shell NRs was attributed to the increase in depletion layer while reducing the conduction channel width by the absorption of NO2. The InN/In2O3 coreshell NRs exhibited a response of 22.43% at 50 degrees C, which was 5.11 times higher than that of pristine InN NRs.Keywords
Funding Information
- Research Foundation of Korea (2017R1E1A1A01073076)
This publication has 42 references indexed in Scilit:
- Glucose-mediated hydrothermal synthesis and gas sensing characteristics of WO3 hollow microspheresSensors and Actuators B: Chemical, 2009
- Electrical Conductivity of InN Nanowires and the Influence of the Native Indium Oxide Formed at Their SurfaceNano Letters, 2009
- Experimental evidence of different hydrogen donors in-type InNPhysical Review B, 2008
- Phonon-plasmon coupling in electron surface accumulation layers in InN nanocolumnsPhysical Review B, 2007
- Electrically Excited Infrared Emission from InN Nanowire TransistorsNano Letters, 2007
- Photoluminescence and Intrinsic Properties of MBE-Grown InN NanowiresNano Letters, 2006
- Investigation of indium–tin-oxide ohmic contact to p-GaN and its application to high-brightness GaN-based light-emitting diodesSolid-State Electronics, 2005
- Intrinsic Electron Accumulation at Clean InN SurfacesPhysical Review Letters, 2004
- Surface charge accumulation of InN films grown by molecular-beam epitaxyApplied Physics Letters, 2003
- Gas sensitive GaN/AlGaN-heterostructuresSensors and Actuators B: Chemical, 2002