Experimental evidence of different hydrogen donors in-type InN
- 11 March 2008
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 77 (12), 125207
- https://doi.org/10.1103/physrevb.77.125207
Abstract
The multiform donor nature of hydrogen in -type indium nitride is experimentally observed in samples exposed to atomic hydrogen. Photoluminescence measurements reveal a tenfold increase in the electron concentration and the formation of a shallow donor band upon hydrogen incorporation. Annealing studies show that hydrogen occupies at least two equilibrium sites having almost equivalent thermal stability.
Keywords
This publication has 29 references indexed in Scilit:
- In‐Plane Bandgap Engineering by Modulated Hydrogenation of Dilute Nitride SemiconductorsAdvanced Materials, 2006
- Passivation of an isoelectronic impurity by atomic hydrogen: The case of ZnTe:OApplied Physics Letters, 2006
- Structure and electronic properties of InN and In-rich group III-nitride alloysJournal of Physics D: Applied Physics, 2006
- First-principles calculations for defects and impurities: Applications to III-nitridesJournal of Applied Physics, 2004
- Universal alignment of hydrogen levels in semiconductors, insulators and solutionsNature, 2003
- Nitrogen passivation induced by atomic hydrogen: ThecasePhysical Review B, 2003
- n-type doping of oxides by hydrogenApplied Physics Letters, 2002
- Effect of hydrogen on the electronic properties of quantum wellsPhysical Review B, 2001
- Hydrogen as a Cause of Doping in Zinc OxidePhysical Review Letters, 2000
- Die Wirkung von Wasserstoff auf die Leitfähigkeit und Lumineszenz von ZinkoxydkristallenThe European Physical Journal A, 1954