Time-Resolved Luminescence Spectra of Porous Si
- 1 August 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (8R), 2470-2471
- https://doi.org/10.1143/jjap.31.2470
Abstract
Time-resolved luminescence spectra of porous Si were measured under an N2 laser excitation. The luminescence shows a nonexponential decay with an initial time constant of less than 5 ns and more than 200 ns for the secondary decay. The luminescence is considered to be associated with localized states, which are probably conduction and valence sublevels in Si microstructures.Keywords
This publication has 4 references indexed in Scilit:
- Evidence for quantum confinement in the photoluminescence of porous Si and SiGeApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Electroluminescence studies in silicon dioxide films containing tiny silicon islandsJournal of Applied Physics, 1984
- Recombination in plasma-deposited amorphous Si:H. Luminescence decayPhysical Review B, 1979