Light emitting diodes for the spectral range λ=3.3–4.3 µm fabricated from InGaAs and InAsSbP solid solutions: Electroluminescence in the temperature range of 20–180°C (Part 2)

Abstract

Light-emitting diodes (LEDs) based on p-n homo-and heterostructures with InAsSb(P) and InGaAs active layers have been designed and studied. An emission power of 0.2 (λ=4.3 µm) to 1.33 mW (λ=3.3 µm) and a conversion efficiency of 30 (InAsSbP, λ=4.3 µm) to 340 mW/(A cm²) (InAsSb/InAsSbP double heterostructure (DH), λ=4.0 µm) have been achieved. The conversion efficiency decreases with increasing current, mainly owing to the Joule heating of the p-n homojunctions. In DH LEDs, the fact that the output power tends to a constant value with increasing current is not associated with active region heating. On raising the temperature from 20 to 180°C, the emission power of the (λ=3.3 and 4.3 µm) LEDs decreases, respectively, 7-and 14-fold, to become 50 (at 1.5 A) and 7 µW (at 3 A) at 180°C.