Detection of gate oxide charge trapping by second-harmonic generation
- 29 November 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (22), 3506-3508
- https://doi.org/10.1063/1.125370
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Electron Photoinjection from Silicon to Ultrathin SiFilms via Ambient OxygenPhysical Review Letters, 1996
- Optical second-harmonic electroreflectance spectroscopy of a Si(001) metal-oxide-semiconductor structurePhysical Review B, 1996
- Nonlinear optical studies of surfacesApplied Physics A, 1994
- Self-starting femtosecond pulse generation from a Ti:sapphire laser synchronously pumped by a pointing-stabilized mode-locked Nd:YAG laserReview of Scientific Instruments, 1994
- Sensitivity of second harmonic generation to space charge effects at Si(111)/electrolyte and Si(111)/SiO2/electrolyte interfacesJournal of Vacuum Science & Technology A, 1994
- Depletion-electric-field-induced changes in second-harmonic generation from GaAsPhysical Review Letters, 1993
- Neutral electron trap generation in SiO2 by hot holesApplied Physics Letters, 1990
- Electron-trap generation by recombination of electrons and holes in SiO2Journal of Applied Physics, 1987
- Trap generation and electron detrapping in SiO2 during high-field stressing of metal-oxide-semiconductor structuresApplied Physics Letters, 1984
- Nonlinear Electroreflectance in Silicon and SilverPhysical Review Letters, 1967