Reflectance of silicon carbide in the vacuum ultraviolet

Abstract
Silicon carbide may be an ideal mirror material for synchrotron radiation applications. Measurement of reflectance at 45 degrees angle of incidence, with two orientations of the reflector about the optic axis, allowed direct comparison of the reflectivities of various polycrystalline forms of silicon carbide with that of gold. Scanning electron microscopy revealed the surface characteristics of the silicon carbide samples.