Electronic properties of Se-treated SiO2/GaAs interfaces
- 1 June 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (22), 2785-2787
- https://doi.org/10.1063/1.106850
Abstract
GaAs metal‐insulator‐semiconductor diodes with a Se‐treated interface and photochemical‐vapor‐deposited SiO2 are investigated. The diodes show little frequency dispersion in the capacitance at any accumulation bias, only a few percent between 1 kHz and 1 MHz. Analysis using Terman’s method shows that the density of interface states near the midgap is drastically reduced. In addition, insertion of a Se‐treated AlGaAs thin layer at the insulator/semiconductor interface is found to reduce the number of interface states near the conduction band minimum. These improved characteristics are preserved after annealing to 400 °C.Keywords
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