Changes in the phase structure and formation of chemical compounds by ion implantation of tantalum thin films
- 1 April 1976
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 33 (2), 205-218
- https://doi.org/10.1016/0040-6090(76)90081-x
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- Annealing and phase stability of tantalum films sputtered in Ar-O2Thin Solid Films, 1974
- Reactive ion bombardment of tantalum thin film resistorsThin Solid Films, 1973
- On the increase in the electrical conductivity of MoO3 and V2O5 following ion bombardment. Studies on bombardment-enhanced conductivity-IJournal of Physics and Chemistry of Solids, 1972
- Use of low-energy accelerators for ion implantationNuclear Instruments and Methods, 1971
- Structure of Tantalum NitridesJapanese Journal of Applied Physics, 1971
- Energy Dissipation by Ions in the kev RegionPhysical Review B, 1961