Three-dimensional analytical subthreshold models for bulk MOSFETs
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 42 (12), 2170-2180
- https://doi.org/10.1109/16.477776
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- An analytical threshold-voltage model of trench-isolated MOS devices with nonuniformly doped substratesIEEE Transactions on Electron Devices, 1992
- A new approach to analytically solving the two-dimensional Poisson's equation and its application in short-channel MOSFET modelingIEEE Transactions on Electron Devices, 1987
- A two-dimensional analytical threshold voltage model for MOSFET's with arbitrarily doped substratesIEEE Electron Device Letters, 1986
- Threshold voltage of a narrow-width MOSFETElectronics Letters, 1981
- Analytical models of threshold voltage and breakdown voltage of short-channel MOSFET's derived from two-dimensional analysisIEEE Transactions on Electron Devices, 1979
- Device characteristics of short-channel and narrow-width MOSFET'sIEEE Transactions on Electron Devices, 1978
- Threshold voltage of narrow channel field effect transistorsSolid-State Electronics, 1976
- Influence of the channel width on the threshold voltage modulation in m.o.s.f.e.t.sElectronics Letters, 1975
- A simple theory to predict the threshold voltage of short-channel IGFET'sSolid-State Electronics, 1974
- Ion-implanted complementary MOS transistors in low-voltage circuitsIEEE Journal of Solid-State Circuits, 1972