Electron tunneling through GaAs grain boundaries
- 15 March 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (6), 471-474
- https://doi.org/10.1063/1.93138
Abstract
Measurements of the zero-bias dc conductance G0 and high frequency capacitance have been made on GaAs bicrystals doped in the range of 4×1017–2×1018 cm−3. The conductance displays a non-Arrhenius temperature dependence with high temperature values of ∂(ln G0)/∂(1/kT) less than the barrier heights deduced from the capacitance. Theoretical calculations of transbarrier currents using the unified approach of Fonash show that thermally assisted tunneling currents are important.Keywords
This publication has 12 references indexed in Scilit:
- Grain boundary recombination: Theory and experiment in siliconJournal of Applied Physics, 1981
- Anomalous low-frequency grain-boundary capacitance in siliconApplied Physics Letters, 1980
- On the mobility of polycrystalline semiconductorsSolid-State Electronics, 1980
- Grain boundary states and varistor behavior in silicon bicrystalsApplied Physics Letters, 1979
- Direct Measurement of Electron Emission from Defect States at Silicon Grain BoundariesPhysical Review Letters, 1979
- The dc voltage dependence of semiconductor grain-boundary resistanceJournal of Applied Physics, 1979
- Zero-bias resistance of grain boundaries in neutron-transmutation-doped polycrystalline siliconJournal of Applied Physics, 1978
- Current transport in metal semiconductor contacts—a unified approachSolid-State Electronics, 1972
- Calculation of Fermi Energy and Bandtail Parameters in Heavily Doped and Degenerate n-Type GaAsJournal of Applied Physics, 1970
- Grain Boundary Barriers in GermaniumPhysical Review B, 1952