Diffraction coupled phase-locked semiconductor laser array

Abstract
A new monolithic, diffraction coupled phase‐locked semiconductor laser array has been fabricated. Stable narrow far‐field patterns (∼3°) and peak power levels of 1 W have been obtained for 100‐μm‐wide devices with threshold currents as low as 250 mA. Such devices may be useful in applications where high power levels and stable radiation patterns are needed.