Photoluminescence study of electron-hole recombination across the tunable effective gap in GaAs n-i-p-i superlattices
- 31 July 1982
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 43 (4), 291-294
- https://doi.org/10.1016/0038-1098(82)90094-1
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Tunable absorption coefficient in GaAs doping superlatticesPhysical Review B, 1982
- Observation of Tunable Band Gap and Two-Dimensional Subbands in a Novel GaAs SuperlatticePhysical Review Letters, 1981
- The Use of Si and Be Impurities for Novel Periodic Doping Structures in GaAs Grown by Molecular Beam EpitaxyJournal of the Electrochemical Society, 1981
- Doping superlatticesJournal of Vacuum Science and Technology, 1979
- Direct Measurement of Hot-Electron Relaxation by Picosecond SpectroscopyPhysical Review Letters, 1979
- Electrical and Optical Properties of Crystals with “nipi‐Superstructure”Physica Status Solidi (b), 1972
- Electron States in Crystals with “nipi‐Superstructure”Physica Status Solidi (b), 1972