Waveforms and Saturation in GaAs Power MESFETs
- 1 October 1978
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Measurements of voltage and current waveforms in power MESFETs have shown that voltage breakdown of the Schottky barrier is responsible for power saturation and consequent nonlinearity of MESFET amplifiers. Also, high peak drain-gate voltages affect device reliability and noise in FET oscillators.Keywords
This publication has 3 references indexed in Scilit:
- Voltage and current waveforms in power MESFETs at microwave frequenciesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1978
- Noise in IMPATT Diode Amplifiers and OscillatorsIEEE Transactions on Microwave Theory and Techniques, 1971
- Noise measurements of microwave local oscillatorsTransactions of the IRE Professional Group on Electron Devices, 1954