Universal stain/etchant for interfaces in III-V compounds
- 1 November 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (11), 5112-5114
- https://doi.org/10.1063/1.1663201
Abstract
The application of the A‐B dislocation etch to the delineation of interfaces in III‐V compounds is described. The etchant is easy to use and has worked on all III‐V compounds tested to date.Keywords
This publication has 1 reference indexed in Scilit:
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965