Rankings
Publications
Search Publications
Cited-By Search
Sources
Publishers
Scholars
Scholars
Top Cited Scholars
Organizations
About
Login
Register
Home
Publications
Nitrogen Ion Implantation and Thermal Annealing in 6H–SiC Single Crystal
Home
Publications
Nitrogen Ion Implantation and Thermal Annealing in 6H–SiC Single Crystal
Nitrogen Ion Implantation and Thermal Annealing in 6H–SiC Single Crystal
TM
Takeshi Miyajima
Takeshi Miyajima
NT
Norihito Tokura
Norihito Tokura
AF
Atsuo Fukumoto
Atsuo Fukumoto
HH
Hidemitsu Hayashi
Hidemitsu Hayashi
KH
Kunihiko Hara
Kunihiko Hara
Publisher Website
Google Scholar
Add to Library
Cite
Download
Share
Download
1 February 1996
journal article
Published by
IOP Publishing
in
Japanese Journal of Applied Physics
Vol. 35
(2S)
https://doi.org/10.1143/jjap.35.1231
Abstract
No abstract available
Keywords
NITROGEN
SIC
IMPLANTATION
DEFECT
SUP
ANNEALING
SUBSTRATE
CARRIER ACTIVATION RATE
Cited by 14 articles