Superconducting properties of aluminium thin films after ion implantation at liquid helium temperatures

Abstract

Using a recent modification of the Orsay ion implantor, Al, O, He, H and D were implanted into Al thin films at temperatures below 6 K. The critical temperature Tc of the implanted films depends on the implanted ion dose and range distribution as well as on radiation damage effects. The higher limit of Tc ranges from 2.7 K to 4.1 K for Al, O and He implantations. It reaches 6.75 K for H, at an average concentration near AlH2