Superlattice Calculation in an Empirical spds* Tight-Binding Model
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- X–Γ indirect intersubband transitions in type II GaAs/AlAs superlatticesApplied Physics Letters, 1996
- Successes and failures of thek⋅pmethod: A direct assessment for GaAs/AlAs quantum structuresPhysical Review B, 1996
- Electronic states in GaAs-AlAs short-period superlattices: energy levels and symmetryJournal of Luminescence, 1994
- Electronic structure of GaAs/AlAs symmetric superlattices: A high-pressure study near the type-I–type-II crossoverPhysical Review B, 1990
- Type-I–type-II transition of GaAs/AlAs short-period superlattices investigated by photoluminescence spectroscopy under hydrostatic pressurePhysical Review B, 1989
- Type-I–type-II transition in ultra-short-period GaAs/AlAs superlatticesPhysical Review B, 1989
- Electronic structure of ultrathin (GaAs)n(AlAs)n [001] superlattices and the Ga0.5Al0.5As alloyJournal of Applied Physics, 1988
- Simple model for structural properties and crystal stability ofsp-bonded solidsPhysical Review B, 1987
- Energy band alignment in GaAs:(Al,Ga)As heterostructuresSurface Science, 1986
- A Semi-empirical tight-binding theory of the electronic structure of semiconductors†Journal of Physics and Chemistry of Solids, 1983