Doubly and triply resonant raman scattering by LO phonons in GaAs/AlAs superlattices
- 15 July 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 38 (3), 2196-2199
- https://doi.org/10.1103/physrevb.38.2196
Abstract
We report measurements on a GaAs/AlAs superlattice with a splitting between the heavy- and light-hole bands nearly equal to the energy of two LO phonons. This condition produces triply resonant Raman scattering (three real intermediate states). The combinations of phonons and the polarization of this resonance can be explained by the dispersion of the phonons of symmetry and the mixing between the hole bands. In one-phonon scattering we attribute a shift in the resonance between the two polarization configurations to doubly resonating impurity-induced Fröhlich scattering.
Keywords
This publication has 19 references indexed in Scilit:
- Triply resonant second-order Raman scattering in GaAsSolid State Communications, 1987
- Resonance Raman scattering in GaAs-As superlattices: Impurity-induced Fröhlich-interaction scatteringPhysical Review B, 1987
- Stress-induced doubly resonant Raman scattering in GaAsPhysical Review Letters, 1986
- Doubly resonant LO-phonon Raman scattering via the deformation potential with a single quantum wellPhysical Review B, 1986
- Observation of doubly resonant LO-phonon Raman scattering with GaAs-Alx Ga1−x As quantum wellsSolid State Communications, 1986
- Comment on "Resonance Raman Scattering by Confined LO and TO Phonons in GaAs-AlAs Superlattices"Physical Review Letters, 1986
- Resonance Raman Scattering by Confined LO and TO Phonons in GaAs-AlAs SuperlatticesPhysical Review Letters, 1985
- "Folded" optical phonons insuperlatticesPhysical Review B, 1984
- Optical Vibrational Modes and Electron-Phonon Interaction in GaAs Quantum WellsPhysical Review Letters, 1984
- Mechanism of strong resonant 1LO Raman scatteringSolid State Communications, 1976